Q1 "High Side" MOSFET：VDS=30V,ID=15A RDS(ON)<11.5mΩ @ VGS=10V RDS(ON)<19mΩ @ VGS=4.5V
Q2 "Low Side" MOSFET：VDS=30V,ID=20A RDS(ON)<8.2mΩ @ VGS=10V RDS(ON)<13mΩ @ VGS=4.5V
Excellent gate charge x RDS(on) product(FOM)
Very low on-resistance RDS(on)
150 °C operating temperature
Pb-free lead plating
100% UIS tested
